III–V Compound Semiconductor Quantum Dots for Nanoeletronics

Abstract

Quantum dots have attracted considerable interest because their atom-like properties make them a good venue for studying physics of confined carriers and the ability to lead to novel device applications in fields such as quantum cryptography, quantum computing, optics and optoelectronics. Zero-dimensional semiconductor structures, or quantum dots (QDs), have attracted considerable interest for their atomic-like optical properties. In order to avoid non-radiative recombination defects caused by nano-fabrication processes, tremendous efforts have been focused on a one-step Stranski- Krastanow growth of self-assembled quantum dots, such as In(Ga)As/GaAs, InP/GaInP and GeSi/Si. In contrast, strain- induced quantum dots formed by locally straining a near surface quantum well with self-assembled islands can be modeled accurately. QW width is usually much smaller than the diameter of the stress or, the inhomogeneous broadening of each dot state is dominated by the QW interface fluctuation and is less influenced by the dot size variation. Various efforts are evident in the development of quantum dots of optically active materials such as compound semiconductors. Present review deals with some of the latest developments in the growth of quantum dots and their applications in opto-electronic devices.