A NEW PROCESS OF OXIDE GROWTH ON SILICON

UTPAL K CHAKRABARTI, V JOSHI

Abstract


A new teehnique of growing silicon dioxide film is deseried.The film is abtaived from a organosilane derivative.The film is evahnted for band-strain parositv etc... by infrared spectroscopy, p-etch density and refractive index ineusrements though the as-deposited film lacks desirable properties. a very wood than an by obtained by densification of the deposited film.

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