Electrical properties of ion beam mixed Ti silicide at metal/Si interface

Abstract

Single-crystal n-Si substrates of 100 orientation with a metal layer Ti~18 nm have been irradiated at room temperature with 197Au of 95 MeV energy. High-energy ion beam mixing has been used to obtain mixing at the interface. Titanium silicide (TiSi2) formed as a result of the irradiation. The electrical properties at the interface, containing the silicide layer, the room temperature I-V curves for the pristine samples and irradiated ones have been studied. Their room temperature resistance values are estimated.