CHEMICAL VAPOUR DEPOSITED SEMICONDUCTING TIN OXIDE THIN FIlMS: EFFECT OF VARIATIONS IN PROCESS PARAMETERS ON FILM CONDUCTIVITY
Abstract
Effect of vartiatons in process parameters such as impurity doping concentration, substrate temperature, substrate material, film thickness, etc., on the surface resistivity and bulk conductivity of semiconducting tin oxide thin films (deposited by the chemical vapour deposition method) have been investigated.
Keywords
Tin oxide; thin films; CVD films.
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