CHEMICAL VAPOUR DEPOSITED SEMICONDUCTING TIN OXIDE THIN FIlMS: EFFECT OF VARIATIONS IN PROCESS PARAMETERS ON FILM CONDUCTIVITY

M A RAMANUJAM, D B GHARE

Abstract


Effect of vartiatons in process parameters such as impurity doping concentration, substrate temperature, substrate material, film thickness, etc., on the surface resistivity and bulk conductivity of semiconducting tin oxide thin films (deposited by the chemical vapour deposition method) have been investigated.

Keywords


Tin oxide; thin films; CVD films.

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