Epitaxial nucleation and growth mechanism of III-V compound semiconductors

Abstract

An attempt has been made to investigate nucleation and growth mechanism of III-V compound semiconductors from vapour-phase epitaxy (VPE) and liquid-phase electroepitaxial (LPEE) growth techniques. Critical nucleation parameters have been derived using classical heterogeneous nucleation theory. The growth rate expressions have been developed in terms of input parameters for VPE and LPEE growth techniques. The model has been employed to understand the growth kinetics of quaternary Ga III the In-Ga- HC1-PHJ-AsHJ-H2 system during VPE growth and InAs during LPEE growth process. The effect of different experimental input  parameter." on the nucleation and growth behaviour have been studied in detail.